IPB80N06S209ATMA1

Manufacturer Part IPB80N06S209ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 80A TO263-3
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB80N06S209ATMA1 PDF
Product Attributes
Type Description
Product Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2360 pF @ 25 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Part Number:
IPB80N06S209ATMA1
Min. :
1
Availability :
59385 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 22 - Sep 26 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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