Type |
Description |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 46mOhm @ 4.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 5µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.5 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 16 V |
FET Feature: | - |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro3™/SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |