| Manufacturer Part | IPB025N10N3GE8187ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 100V 180A TO263-7 |
| Category | Discrete Semiconductor Products |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | IPB025N10N3GE8187ATMA1 PDF |
| Type | Description |
|---|---|
| Product Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 2.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs: | 206 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 14800 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-7 |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
MOSFET N-CH 100V 180A TO263-7
