Manufacturer Part | BSP149H6327XTSA1 |
---|---|
Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 200V 660MA SOT223-4 |
Category | Discrete Semiconductor Products |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | BSP149H6327XTSA1 PDF |
Type | Description |
---|---|
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 660mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Rds On (Max) @ Id, Vgs: | 1.8Ohm @ 660mA, 10V |
Vgs(th) (Max) @ Id: | 1V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 430 pF @ 25 V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |