IPL60R2K1C6SATMA1

Manufacturer Part IPL60R2K1C6SATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 2.3A THIN-PAK
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPL60R2K1C6SATMA1 PDF
Product Attributes
Type Description
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:-
Power Dissipation (Max):21.6W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSON-8-2
Package / Case:8-PowerTDFN
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Part Number:
IPL60R2K1C6SATMA1
Min. :
1
Availability :
58440 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 23 - Sep 27 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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