IMW120R060M1HXKSA1

Manufacturer Part IMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Description SICFET N-CH 1.2KV 36A TO247-3
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Product Attributes
Type Description
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V, 18V
Rds On (Max) @ Id, Vgs:78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id:5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 18 V
Vgs (Max):+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 800 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
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Part Number:
IMW120R060M1HXKSA1
Min. :
1
Availability :
5493 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 23 - Sep 27 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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IMW120R060M1HXKSA1

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SICFET N-CH 1.2KV 36A TO247-3

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