IPN60R360PFD7SATMA1

Manufacturer Part IPN60R360PFD7SATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 650V 10A SOT223
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Product Attributes
Type Description
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:534 pF @ 400 V
FET Feature:-
Power Dissipation (Max):7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-3-1
Package / Case:TO-261-3
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Part Number:
IPN60R360PFD7SATMA1
Min. :
1
Availability :
53768 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 23 - Sep 27 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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