IPD80R2K0P7ATMA1

Manufacturer Part IPD80R2K0P7ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 800V 3A TO252-3
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPD80R2K0P7ATMA1 PDF
Product Attributes
Type Description
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 500 V
FET Feature:-
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Same Series
IPD80R1K4P7ATMA1
IPD80R1K4P7ATMA1
MOSFET N-CH 800V 4A TO252
Infineon Technologies
IPD80R1K2P7ATMA1
IPD80R1K2P7ATMA1
MOSFET N-CH 800V 4.5A TO252-3
Infineon Technologies
IPD80R600P7ATMA1
IPD80R600P7ATMA1
MOSFET N-CH 800V 8A TO252-3
Infineon Technologies
IPD80R900P7ATMA1
IPD80R900P7ATMA1
MOSFET N-CH 800V 6A TO252-3
Infineon Technologies
IPD80R360P7ATMA1
IPD80R360P7ATMA1
MOSFET N-CH 800V 13A TO252-3
Infineon Technologies
IPD80R3K3P7ATMA1
IPD80R3K3P7ATMA1
MOSFET N-CH 800V 1.9A TO252-3
Infineon Technologies
Hot Sales parts
Quote Request
Part Number:
IPD80R2K0P7ATMA1
Min. :
1
Availability :
93744 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 22 - Sep 26 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
Recently Viewed
IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

MOSFET N-CH 800V 3A TO252-3

Top