IGLD60R070D1AUMA3

Manufacturer Part IGLD60R070D1AUMA3
Manufacturer Infineon Technologies
Description GANFET N-CH
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Product Attributes
Type Description
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Feature:-
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-LSON-8-1
Package / Case:8-LDFN Exposed Pad
Same Series
IGLD60R190D1SAUMA1
IGLD60R190D1SAUMA1
GAN HV PG-LSON-8
Infineon Technologies
IGLD60R070D1AUMA3
IGLD60R070D1AUMA3
GANFET N-CH
Infineon Technologies
IGLD60R070D1AUMA1
IGLD60R070D1AUMA1
GANFET N-CH 600V 15A LSON-8
Infineon Technologies
IGLD60R190D1AUMA1
IGLD60R190D1AUMA1
MOSFET N-CH 600V 10A LSON-8
Infineon Technologies
Hot Sales parts
Quote Request
Part Number:
IGLD60R070D1AUMA3
Min. :
1
Availability :
3563 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 23 - Sep 27 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
Recently Viewed
IGLD60R070D1AUMA3

IGLD60R070D1AUMA3

GANFET N-CH

Top