IPD12CNE8N G

Manufacturer Part IPD12CNE8N G
Manufacturer Infineon Technologies
Description MOSFET N-CH 85V 67A TO252-3
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPD12CNE8N G PDF
Product Attributes
Type Description
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 40 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Same Series
IPD135N03LGBTMA1
IPD135N03LGBTMA1
LV POWER MOS
Infineon Technologies
IPD14N06S280ATMA2
IPD14N06S280ATMA2
MOSFET N-CH 55V 17A TO252-31
Infineon Technologies
IPD100N04S4L02ATMA1
IPD100N04S4L02ATMA1
MOSFET N-CHANNEL_30/40V
Infineon Technologies
IPD135N03LGATMA1
IPD135N03LGATMA1
MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
IPD100N04S402ATMA1
IPD100N04S402ATMA1
MOSFET N-CH 40V 100A TO252-3
Infineon Technologies
IPD127N06LGBTMA1
IPD127N06LGBTMA1
MOSFET N-CH 60V 50A TO252-3
Infineon Technologies
Hot Sales parts
Quote Request
Part Number:
IPD12CNE8N G
Min. :
1
Availability :
77278 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 23 - Sep 27 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
Recently Viewed
IPD12CNE8N G

IPD12CNE8N G

MOSFET N-CH 85V 67A TO252-3

Top