| Manufacturer Part | 2N657S |
|---|---|
| Manufacturer | Microchip Technology |
| Description | POWER BJT |
| Category | Discrete Semiconductor Products |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Type | Description |
|---|---|
| Product Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | - |
| Voltage - Collector Emitter Breakdown (Max): | 40 V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
| Power - Max: | 600 mW |
| Frequency - Transition: | - |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package: | TO-5AA |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
POWER BJT
