TPS1101DR

Manufacturer Part TPS1101DR
Manufacturer Texas Instruments
Description MOSFET P-CH 15V 2.3A 8SOIC
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Product Attributes
Type Description
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):15 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.25 nC @ 10 V
Vgs (Max):+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):791mW (Ta)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number:
TPS1101DR
Min. :
1
Availability :
91297 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 21 - Sep 25 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
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Credit Card 4% fee
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Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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MOSFET P-CH 15V 2.3A 8SOIC

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