CSD85312Q3E

Manufacturer Part CSD85312Q3E
Manufacturer Texas Instruments
Description MOSFET 2N-CH 20V 39A 8VSON
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Product Attributes
Type Description
Product Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:39A
Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:2390pF @ 10V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:8-VSON (3.3x3.3)
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Quote Request
Part Number:
CSD85312Q3E
Min. :
1
Availability :
80259 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 21 - Sep 25 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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