TRS8E65C,S1Q

Manufacturer Part TRS8E65C,S1Q
Manufacturer Toshiba Semiconductor and Storage
Description DIODE SCHOTTKY 650V 8A TO220-2L
Category Discrete Semiconductor Products
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TRS8E65C,S1Q PDF
Product Attributes
Type Description
Product Status:Obsolete
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:90 µA @ 650 V
Capacitance @ Vr, F:44pF @ 650V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2L
Operating Temperature - Junction:175°C (Max)
Same Series
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TRS8E65F,S1Q
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PB-F DIODE TO-220-2L V=650 IF=8A
Toshiba Semiconductor and Storage
TRS8E65C,S1Q
TRS8E65C,S1Q
DIODE SCHOTTKY 650V 8A TO220-2L
Toshiba Semiconductor and Storage
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Part Number:
TRS8E65C,S1Q
Min. :
1
Availability :
70525 pieces
Shipped from :
HK warehouse
Expected Shipping :
Sep 22 - Sep 26 2024
Supplier Lead-Time :
Call for availability
Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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