Type |
Description |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 92mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5 nC @ 4.5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 290 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.25W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Micro3™/SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |